Early formation of surface states in MOS structures under ionizing irradiation
نویسندگان
چکیده
A quantitative model of the early formation surface states (SS) in MOS structures under ionizing irradiation (II) with a limiting stage --- dispersion transport holes has been developed. According to model, main contribution SS occurs during microsecond pulse II for thin gate dielectric and after end thick field oxide. The increase density is associated presence localized holes. late limited by hydrogen ions, which delays from 0.1 10 4 seconds or more. Keywords: MOSFET structure, irradiation, conditions, transport.
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ژورنال
عنوان ژورنال: Fizika tverdogo tela
سال: 2023
ISSN: ['0367-3294', '1726-7498']
DOI: https://doi.org/10.21883/pss.2023.05.56043.22